Termination structure for MOSgated power devices
US6900523B2 · kind B2 · utility
7Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | May 31, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The termination of a MOSgated device is formed by a trench bevel which surrounds the active device area. The trench bevel has flat walls which extend into and through the epitaxial layer containing the active area which has a lateral extend equal to or less than the thickness of the epitaxial layer. The surface of the bevel is coated with a resistive film, preferably, an amorphous silicon which connects the device source to the device drain to cause the electric field in the epitaxial silicon to the linearly distributed over the length of the bevel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.