Inventor · Torrance, CA, US

Zhijun Qu

15Patents
3h-index
14Co-inventors
57Inventor score

Filing activity: Jul 3, 2002 → Sep 12, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6621122B2 Termination structure for superjunction device Electricity 41 Expired
US6900523B2 Termination structure for MOSgated power devices Electricity 7 Expired
US7268395B2 Deep trench super switch device Electricity 5 Expired
US6919241B2 Superjunction device and process for its manufacture Electricity 2 Expired
US9755058B2 Surface devices within a vertical power device Electricity 2 Active
US7482285B2 Dual epitaxial layer for high voltage vertical conduction power MOSFET devices Electricity 2 Expired
US9806186B2 Termination region architecture for vertical power transistors Electricity 2 Active
US10580884B2 Super junction MOS bipolar transistor having drain gaps Electricity 1 Active
US10074735B2 Surface devices within a vertical power device Electricity 1 Active
US8830674B2 Cooling system and electronic device including the cooling system Electricity 1 Active
US11387226B2 Chip power supply system, chip, PCB, and computer device Electricity 0 Active
US8908712B2 Method, system and access device for implementing service configuration Electricity 0 Active
US12114425B2 Cable assembly, signal transmission structure, and electronic device Electricity 0 Active
US7756147B2 VLAN-based data packet transmission and ethernet bridge device Electricity 0 Active
US10134890B2 Termination region architecture for vertical power transistors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.