Massively parallel atomic layer deposition/chemical vapor deposition system
US6902624B2 · kind B2 · utility
49Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Feb 13, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.