Patterning of dielectric with added layers of materials aside from photoresist for enhanced pattern transfer
US6902870B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For patterning an opening through a patterned material, a coating material, a slow-etch material, and a photoresist material are deposited over the patterned material. The opening is patterned through the photoresist material, and the slow-etch material exposed through the opening is etched away. The photoresist material and the coating material exposed through the opening are then etched away. A remaining portion of the slow-etch hard-mask material and the patterned material exposed through the opening are then etched away such that the coating material outside of the opening is exposed. A remaining portion of the coating material is then etched away with an etch agent that does not etch the patterned material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.