Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistors

US6902970B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Michel Marty · Buc, FR
• Alain Chantre · Seyssinet-Pariset, FR

Key dates

• Filing date: Jan 27, 2003
• Grant date: Jun 7, 2005
• Expiry date: Apr 16, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0109

Abstract

Production of an insulated-gate field-effect transistor is begun and interrupted at an uncompleted point. Then, a bipolar transistor is almost completely produced. At that point, a return is made to the production of the insulated-gate field-effect transistor. Lastly, a finishing step common to both transistors and including common thermal annealing and common siliciding is performed.