Hemi-spherical grain silicon enhancement
US6902973B2 · kind B2 · utility
5Cited by
7References
59Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 18, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Hemi-spherical grain silicon enhancement with epitaxial silicon for semiconductor assemblies is described. Epitaxial silicon is used to enhance hemi-spherical grain silicon on semiconductor structures, such as storage node capacitor plates for a semiconductor assembly. Methods described include forming an optional amorphous silicon layer as a base to firm hemi-shperical grain silicon thereon. The rough texture of the hemi-spherical grain silicon enhances the overall textured surface of the capacitor plate by the addition of epitaxial silicon.
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