In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US6903031B2 · kind B2 · utility
93Cited by
120References
26Claims
0Family size
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Key dates
| Filing date | Sep 3, 2003 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Sep 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.