Patent · US Expired

Operating method for a semiconductor component

US6905892B2 · kind B2 · utility

70Cited by

2References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Kai Esmark · Schwanau, DE
Harald Gossner · Riemerling, DE
Philipp Riess · Munich, DE
Wolfgang Stadler · Hilpoltstein, DE
Martin Streibl · Petershausen, DE
Martin Wendel · Höhenkirchen-Siegertsbrunn, DE

Key dates

Filing date	Jul 19, 2002
Grant date	Jun 14, 2005
Priority date	—
Expiry date	Oct 10, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff1) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff2), which is less than the first differential resistance (Rdiff1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.