Method for processing a surface of an SiC semiconductor layer and Schottky contact

US6905916B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Bartsch · Viernheim, DE
• Michael Treu · Villach, AT
• Roland Rupp · Achern, DE

Key dates

• Filing date: May 15, 2002
• Grant date: Jun 14, 2005
• Expiry date: Aug 1, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0485
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.