Process for forming silicon oxide material
US6905939B2 · kind B2 · utility
23Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.