Xinyun Xia
4Patents
4h-index
8Co-inventors
36Inventor score
Filing activity: Feb 27, 2002 → Aug 26, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7335609B2 | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials | Electricity | 42 | Expired |
| US7456116B2 | Gap-fill depositions in the formation of silicon containing dielectric materials | Chemistry; Metallurgy | 37 | Expired |
| US6905939B2 | Process for forming silicon oxide material | Electricity | 23 | Expired |
| US7642171B2 | Multi-step anneal of thin films for film densification and improved gap-fill | Electricity | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.