Group III nitride LED with undoped cladding layer and multiple quantum well
US6906352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2002 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | Sep 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1; a second n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1−xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1−x−yN barrier layers where 0≦x≦1 and 0≦y≦1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.