Semiconductor device and method of manufacturing the same
US6906908B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | May 20, 2004 |
| Grant date | Jun 14, 2005 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate, an insulation region which covers the capacitor and has a first hole and a second hole, the first hole being provided apart from the capacitor and extending in a vertical direction with respect to a main surface of the semiconductor substrate, the second hole reaching an electrode of the capacitor, extending in the vertical direction with respect to the main surface of the semiconductor substrate and being shallower than the first hole, a tungsten plug provided in the first hole, a first oxygen barrier film provided between the tungsten plug and a side wall of the first hole, and a conductive plug provided in the second hole and connected to the electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.