Method and apparatus for adjusting the thickness of a thin layer of semiconductor material
US6908774B2 · kind B2 · utility
6Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2003 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Sep 6, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for adjusting the thickness of a thin semiconductor material layer. The method includes measuring the layer to establish a thickness profile, determining thickness adjustment specifications from the measured thickness profile, and adjusting the thickness of the layer in accordance with the specifications by sacrificial oxidation. An apparatus for adjusting the thickness of a thin layer of semiconductor material according to this method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.