Support structures for wirebond regions of contact pads over low modulus materials

US6908841B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Lloyd Burrell · Poughkeepsie, US
• Douglas W. Kemerer · South Burlington, US
• Henry A. Nye, III · Brookfield, US
• Hans-Joachim Barth · Munich, DE
• Emmanuel F. Crabbe · Chappaqua, US
• David F. Anderson · Batavia, US
• Joseph Chan · San Francisco, US

Key dates

• Filing date: Sep 20, 2002
• Grant date: Jun 21, 2005
• Expiry date: Sep 20, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device (200) having support structures (218, 226, 236) beneath wirebond regions (214) of contact pads (204) and a method of forming same. Low modulus dielectric layers (216, 222, 232) are disposed over a workpiece (212). Support structures (218, 226, 236) are formed in the low modulus dielectric layers (216, 222, 232), and support vias (224, 234) are formed between the support structures (218, 226, 236). A high modulus dielectric film (220, 230) is disposed between each low modulus dielectric layer (216, 222, 232), and a high modulus dielectric layer (256) is disposed over the top low modulus dielectric layer (232). Contact pads (204) are formed in the high modulus dielectric layer (256). Each support via (234) within the low modulus dielectric layer (232) resides directly above a support via (224) in the underlying low modulus dielectric layer (222), to form a plurality of via support stacks within the low modulus dielectric layers (216, 222, 232).