Multi-height FinFETS

US6909147B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ingo Aller · Holzgerlingen, DE
• Joachim Keinert · Altdorf, DE
• Thomas Ludwig · Sindelfingen, DE
• Edward J. Nowak · South Burlington, US
• BethAnn Rainey · South Burlington, US

Key dates

• Filing date: May 5, 2003
• Grant date: Jun 21, 2005
• Expiry date: Jul 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.