Time recording device and a time recording method employing a semiconductor element

US6909294B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Herbert Palm · Hohenkirchen, DE
• Hans Taddiken · Munich, DE
• Erdmute Wohlrab · Munich, DE

Key dates

• Filing date: Aug 11, 2003
• Grant date: Jun 21, 2005
• Expiry date: Aug 11, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/69
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.