MRAM architecture with a flux closed data storage layer
US6909633B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.