Method and system for monitoring a semiconductor device manufacturing process
US6909930B2 · kind B2 · utility
24Cited by
4References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Jun 21, 2005 |
| Priority date | — |
| Expiry date | May 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.