Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions
US6911367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source drain regions. A method of forming epitaxially-grown semiconductive material having a flattened surface can include the following. Initially, a single crystal first semiconductor material is provided. A second semiconductive material is epitaxially grown from a surface of the first semiconductor material. The epitaxial growth is stopped, and subsequently an upper surface of the second semiconductor material is exposed to at least one hydrogen isotope to reduce curvature of (i.e., flatten) a surface of the second semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.