LVTSCR with compact design

US6911679B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Ann Concannon · San Jose, US
• Marcel ter Beek · Pleasanton, US
• Peter J. Hopper · San Jose, US

Key dates

• Filing date: Jan 9, 2003
• Grant date: Jun 28, 2005
• Expiry date: Jan 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

In an ESD protection device making use of a LVTSCR, at least one contacted drain and at least one emitter are formed, and are arranged laterally next to each other to be substantially equidistant from the gate of the LVTSCR, to improve holding voltage and decrease size. The ratio of emitter width to contacted drain width is adjusted to achieve the desired characteristics.