HDP process for high aspect ratio gap filling
US6914015B2 · kind B2 · utility
8Cited by
9References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Oct 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An HDP process for high aspect ratio gap filling comprises contacting a semiconductor substrate with an oxide precursor under high density plasma conditions at a first pressure less than about 10 millitorr, wherein said gaps are partially filled with oxide; and further contacting the substrate with an oxide precursor under high density plasma conditions at a second pressure greater than about 10 millitorr, wherein said gaps are further filled with oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.