Patent · US Expired

DRAM memory with a shared sense amplifier structure

US6914837B2 · kind B2 · utility

7Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Schroeder · Munich, DE
Manfred Proell · Dorfen, DE
Aurel von Campenhausen · Munich, DE
Marcin Gnat · Birkenfeld, DE

Key dates

Filing date	Jan 22, 2004
Grant date	Jul 5, 2005
Priority date	—
Expiry date	Jan 22, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C2207/005
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A RAM memory with a shared sense amplifier structure, in which sense amplifiers are arranged in strips between two adjacent cell blocks and are configured as differential amplifiers. In an exemplary embodiment, a one of four bit line pairs of the two adjacent cell blocks can be selected for connection to a sense amplifier at any one time using respective isolation transistor pairs, in response to a connection control signal fed to the latter. A signal sent on a word line coupled to a memory cell associated with the selected bit line pair, provides access to the memory cell by the sense amplifier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.