Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile
US6916744B2 · kind B2 · utility
16Cited by
18References
19Claims
0Family size
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Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.