Reliable low-k interconnect structure with hybrid dielectric

US6917108B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John A. Fitzsimmons · Poughkeepsie, US
• Stephen E. Greco · Lagrangeville, US
• Jia Lee · San Jose, US
• Stephen M. Gates · Ossining, US
• Terry A. Spooner · Clifton Park, US
• Matthew S. Angyal · Stormville, US
• Habib Hichri · Snyder, US
• Theordorus E. Standaert · Wappingers Falls, US
• Glenn A. Biery · Poughkeepsie, US

Key dates

• Filing date: Nov 14, 2002
• Grant date: Jul 12, 2005
• Expiry date: Nov 24, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.