Detecting over programmed memory
US6917542B2 · kind B2 · utility
81Cited by
26References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jan 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.