Inventor · Milpitas, CA, US

Yan Li

177Patents
37h-index
116Co-inventors
93Inventor score

Filing activity: Sep 26, 1996 → Mar 29, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6956770B2 Non-volatile memory and method with bit line compensation dependent on neighboring operating modes Physics 531 Expired
US7187585B2 Read operation for non-volatile storage that includes compensation for coupling Physics 500 Expired
US6987693B2 Non-volatile memory and method with reduced neighboring field errors Physics 471 Expired
US7602647B2 System that compensates for coupling based on sensing a neighbor using coupling Physics 413 Active
US6781877B2 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells Physics 318 Expired
US6771536B2 Operating techniques for reducing program and read disturbs of a non-volatile memory Physics 283 Expired
US6859397B2 Source side self boosting technique for non-volatile memory Physics 273 Expired
US7345928B2 Data recovery methods in multi-state memory after program fail Physics 166 Active
US7177199B2 Behavior based programming of non-volatile memory Physics 150 Expired
US7023736B2 Non-volatile memory and method with improved sensing Physics 146 Expired
US7120051B2 Pipelined programming of non-volatile memories using early data Physics 141 Expired
US7170802B2 Flexible and area efficient column redundancy for non-volatile memories Physics 128 Expired
US7301817B2 Method for programming of multi-state non-volatile memory using smart verify Physics 127 Expired
US5960462A Method and apparatus for analyzing a main memory configuration to program a memory controller Physics 116 Expired
US7057939B2 Non-volatile memory and control with improved partial page program capability Physics 113 Expired
US6356986B1 Method and apparatus for analyzing a main memory configuration Physics 112 Expired
US6870768B2 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells Physics 112 Expired
US7420847B2 Multi-state memory having data recovery after program fail Physics 107 Expired
US7158421B2 Use of data latches in multi-phase programming of non-volatile memories Physics 98 Expired
US7570520B2 Non-volatile storage system with initial programming voltage based on trial Physics 98 Active
US7206230B2 Use of data latches in cache operations of non-volatile memories Emerging Cross-Sectional Technologies 97 Expired
US7443729B2 System that compensates for coupling based on sensing a neighbor using coupling Physics 82 Active
US6917542B2 Detecting over programmed memory Physics 81 Expired
US7885119B2 Compensating for coupling during programming Physics 72 Active
US7196931B2 Non-volatile memory and method with reduced source line bias errors Physics 69 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.