Method and apparatus for predicting electrical parameters using measured and predicted fabrication parameters
US6917849B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Jul 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes collecting a first fabrication parameter associated with the processing of a selected semiconductor device. A second fabrication parameter is estimated for the selected semiconductor device. A first value for at least one electrical characteristic of the selected semiconductor device is predicted based on the collected first fabrication parameter and the estimated second fabrication parameter. A system includes a data collection unit and a prediction unit. The data collection unit is configured to collect a first fabrication parameter associated with the processing of a selected semiconductor device. The prediction unit is configured to estimate a second fabrication parameter for the selected semiconductor device and predict a first value for at least one electrical characteristic of the selected semiconductor device based on the collected first fabrication parameter and the estimated second fabrication parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.