Apparatus for ion beam implantation
US6918351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Sep 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.