Angled implant for shorter trench emitter
US6919248B2 · kind B2 · utility
16Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2003 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Jun 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.