LSI device etching method and apparatus thereof
US6919274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.