Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same

US6919590B2 · kind B2 · utility

Assignee

• Motorola, Inc. · US

Inventors

• Darrell G. Hill · Tempe, US
• Mariam Sadaka · Austin, US
• Marcus Ray · Tempe, US

Key dates

• Filing date: Aug 29, 2003
• Grant date: Jul 19, 2005
• Expiry date: Aug 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor component includes: a semiconductor substrate (110); an epitaxial semiconductor layer (120) above the semiconductor substrate; a bipolar transistor (770, 870) in the epitaxial semiconductor layer; and a field effect transistor (780, 880) in the epitaxial semiconductor layer. A portion of the epitaxial semiconductor layer forms a base of the bipolar transistor and a gate of the field effect transistor, and the portion of the epitaxial semiconductor layer has a substantially uniform doping concentration. In the same or another embodiment, a different portion of the epitaxial semiconductor layer forms an emitter of the bipolar transistor and a channel of the field effect transistor, and the different portion of the epitaxial semiconductor layer has a substantially uniform doping concentration that can be the same as or different from the substantially uniform doping concentration of the portion of the epitaxial semiconductor layer.