Silicon controlled rectifier structure with guard ring controlled circuit
US6919604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Oct 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of guard ring of PMSCR. In normal operation, the switch is of low impedance such that the guard ring is short to anode and collects electrons to enhance the power-zapping immunity. Furthermore, during the ESD (electrostatic discharge) event, the switch is of high impedance such that the guard ring is non-functional. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV (high voltage) pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.