Method for forming metal replacement gate of high performance
US6921711B2 · kind B2 · utility
119Cited by
9References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 9, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Sep 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/666
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.