Method for modifying dielectric characteristics of dielectric layers

US6921727B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kang-Lie Chiang · San Jose, US
• Mahmoud Dahimene · Sunnyvale, US
• Xiaoye Zhao · Mountain View, US
• Yan Ye · Saratoga, US
• Gerardo Delgadino · Fremont, US
• Hoiman Hung · San Jose, US
• Li-Qun Xia · Santa Clara, US
• Giuseppina Conti · Oakland, US

Key dates

• Filing date: Mar 11, 2003
• Grant date: Jul 26, 2005
• Expiry date: Jul 7, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76831
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of treating a dielectric layer having a low dielectric constant, where the dielectric layer has been processed in a manner that causes a change in the dielectric constant of an affected region of the layer. The treatment of the affected region may comprise etching, sputtering, annealing, or combinations thereof. The treatment returns the dielectric constant of the dielectric layer to substantially the dielectric constant that existed before processing.