Double pinned photodiode for CMOS APS and method of formation
US6921934B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Mar 28, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.