Narrow fin FinFET

US6921963B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Zoran Krivokapic · Santa Clara, US
• Judy Xilin An · San Jose, US
• Srikanteswara Dakshina-Murthy · Wappingers Falls, US
• Haihong Wang · Fremont, US
• Bin Yu · Cupertino, US

Key dates

• Filing date: Apr 23, 2004
• Grant date: Jul 26, 2005
• Expiry date: Apr 23, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6748

Abstract

A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.