Method for forming a ferroelectric capacitor device
US6924156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric capacitor device, such as an FeRAM device is formed by forming a substrate extending in a first plane and comprising a number of layers of material, forming a hard mask layer on the substrate and forming a first layer of a first material on the hard mask layer. The hard mask shape is then defined by etching the hard mask layer. A second layer of the first material is deposited on the etched hard mask layer. The deposited second layer has one or more side surfaces extending substantially perpendicular to the plane of the substrate. The second layer and the number of layers forming the substrate are then etched to shape the ferroelectric capacitor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.