Method of forming a metal layer using an intermittent precursor gas flow process
US6924223B2 · kind B2 · utility
37Cited by
9References
53Claims
0Family size
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.