Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator
US6924511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Sep 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The triangle mesa structure (which can also be truncated) further comprises an active layer, a lower conducting mirror and an upper conducting mirror for vertical confinement of light in the optical cavity, a contact layer formed on the upper mirror, a metallic contact formed on the contact layer. An electrical current is applied to the device according to the invention through the metallic contact linked to the contact layer, and subsequently to the lower electrode through the lower mirror and the conducting substrate. The applied current results in light generation in the active layer with vertical light output through the metallic contact. A corresponding light generation method is also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.