Process for forming fast recovery diode with a single large area P/N junction

US6927141B2 · kind B2 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Kohji Andoh · El Segundo, US
• Silvestro Fimiani · Torino, IT
• Fabrizio Ruo Redda · El Segundo, US
• Davide Chiola · Chino, US

Key dates

• Filing date: Aug 18, 2003
• Grant date: Aug 9, 2005
• Expiry date: Aug 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53

Abstract

A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.