Memory device with discrete layers of phase change memory material
US6927410B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 4, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase changing memory device, and method of making the same, that includes programmable memory material disposed between a pair of electrodes. The programmable memory material includes discrete layers of phase change material, separated by conductive interface layers, that exhibits relatively stable resistivity values over discrete ranges of crystallizing and amorphousizing thermal pulses applied thereto, for multi-bit storage. The memory material and one of the electrodes can be disposed along spacer material surfaces to form an electrical current path that narrows in width as the current path approaches the other electrode, such that electrical current passing through the current path generates heat for heating the memory material disposed between the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.