Semiconductor device and its production process
US6927435B2 · kind B2 · utility
6Cited by
27References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2002 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Apr 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0144
Abstract
A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive strain is produced and equipped with MOS transistors, can suppress leakage current flowing through the gate insulators and has high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.