Electronic circuit structure with improved dielectric properties
US6930006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | May 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having improved dielectric properties and a method for fabricating a semiconductor device. A semiconductor device includes a semiconductor layer suitable for device formation. A dielectric layer formed over the semiconductor layer has first and second opposing surfaces, a first surface region along the first surface and a second surface region along the second surface. A mid region is positioned between the first and second surface regions. The material of the dielectric layer includes a species having a concentration greater in the mid region than along the first opposing surface. The dielectric layer may be incorporated in a field effect transistor or a capacitor. According to a disclosed method an insulative layer is formed with two or more elements chemically bonded to one another. An additional species is introduced into the insulative layer in sufficient quantity to modify the net dielectric constant of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.