Photo-assisted method for semiconductor fabrication
US6930041B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 12, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Jun 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo-energy for maintaining activation of the active species or providing photo-energy for a non-plasma species during transfer through the transparent tube to the processing chamber. The source of photo-energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for processes such as layer-by-layer annealing and deposition and also removal of contaminants from deposited layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.