Patent · US Expired

Temperature-sensing diode

US6930371B2 · kind B2 · utility

3Cited by
9References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2004
Grant dateAug 16, 2005
Priority date
Expiry dateFeb 3, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/60
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.