Patent · US Expired

Cross-point MRAM array with reduced voltage drop across MTJ's

US6930915B2 · kind B2 · utility

3Cited by

2References

51Claims

0Family size

Assignees

Infineon Technologies AG · DE
International Business Machines Corporation · US

Inventors

Stefan Lammers · Hersbruck, DE
Hans-Heinrich Viehmann · Munich, DE
John K. DeBrosse · Colchester, US

Key dates

Filing date	Jun 19, 2003
Grant date	Aug 16, 2005
Priority date	—
Expiry date	Jul 26, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/15
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of storing information in a cross-point magnetic memory array and a cross-point magnetic memory device structure. The voltage drop across magnetic tunnel junctions (MTJ's) during a write operation is minimized to prevent damage to the MTJ's of the array. The voltage drop across the selected MTJ's, the unselected MTJ's, or both, is minimized during a write operation, reducing stress across the MTJ's, decreasing leakage currents, decreasing power consumption and increasing the write margin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.