Patent · US Expired

Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

US6932892B2 · kind B2 · utility

176Cited by
56References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 27, 2003
Grant dateAug 23, 2005
Priority date—
Expiry dateOct 27, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K3/423
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.