Method for improved alignment of magnetic tunnel junction elements
US6933204B2 · kind B2 · utility
12Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for aligning an opaque, active device in a semiconductor structure includes forming an opaque layer over an optically transparent layer formed on a lower metallization level, the lower metallization level including one or more alignment marks formed therein. A portion of the opaque layer is patterned and opened corresponding to the location of the one or more alignment marks in the lower metallization level so as to render the one or more alignment marks optically visible. The opaque layer is then patterned with respect to the lower metallization level, using the optically visible one or more alignment marks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.