Semiconductor device and method of forming the same
US6933227B2 · kind B2 · utility
1Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a semiconductor structure includes forming a gate dielectric overlying a substrate, a conductive gate electrode overlying the gate dielectric, a barrier layer overlying and in physical contact with the conductive gate electrode, and an organic anti-reflective coating (ARC) layer overlying and in physical contact with the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.